| PART |
Description |
Maker |
| 1N5271 1N5230 1N5256 1N5248 1N5223 1N5267 1N5272 1 |
Pd=500mW, Vz=87V zener diode
Pd=500mW, Vz=27V zener diode
Pd=500mW, Vz=22V zener diode
MVSTBW 2,5/ 3-ST BK
MSTBW 2.5/12-G
500 mW Zener Diode 2.4 to 200 Volts
Pd=500mW, Vz=36V zener diode
Pd=500mW, Vz=19V zener diode
|
MCC
Micro Commercial Compon...
Micro Commercial Components Corp.
http://
|
| BC817DS BC817DS115 |
NPN general purpose double transistor; Package: SOT457 (SC-74); Container: Tape reel smd 500 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS301NX115 |
12 V, 5.3 A NPN low VCEsat (BISS) transistor; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd 5300 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| PMP4201G PMP4201V PMP4201Y PMP4201Y115 |
NPN/NPN matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| CZT3150 |
SMD Bipolar Power Transistor NPN High Current
SURFACE MOUNT NPN SILICON POWER TRANSISTOR
|
Central Semiconductor Corp
|
| MMSZ5226B MMSZ5230B MMSZ5248B MMSZ5236B MMSZ5260B |
500mW Two Terminals SMD Zener Diodes
|
TAITRON Components Incorporated
TAITRON Components Incorpor...
TAITRON Components Inco...
|
| BZX55B20 BZX55B62 BZX55B2V4 BZX55B22 BZX55B24 BZX5 |
500mW, 2% Tolerance SMD Zener Diode
|
Taiwan Semiconductor Co...
Taiwan Semiconductor Company, Ltd
|
| TS4148RXG TS4148RXG-14 |
500mW High Speed SMD Switching Diode
|
Taiwan Semiconductor Co...
|
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| BC817-40 BC817 BC817-25 BC817-16 BC817-25/T1 |
NPN general purpose transistor
TRANSISTOR SMD KLEINSIGN. SOT 23 323 143
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
